| PART |
Description |
Maker |
| SFH464E7800 SFH464 Q62702-Q1745 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm 发动器，Lumineszenzdiode 660纳米发光二极管的GaAIAs 660纳米
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q65110A2741 SFH722112 |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
|
OSRAM GmbH
|
| 127141 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 115280 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 137141L |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
http://
|
| 137141 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
http://
|
| 193150 |
GaAlAs / GaAlAs LED Chips
|
OSA Opto Light GmbH
|
| 123144H |
GaAlAs / GaAlAs LED Chips
|
OSA Opto Light GmbH
|
| SFH405 SFH40512 Q62702P0835 |
GaAs-IR-Lumineszenzdiode
|
OSRAM GmbH
|
| SFH40903 SFH409 SFH409-2 |
GaAs-IR-Lumineszenzdiode
|
OSRAM GmbH
|
| SFH4110 Q62702P5072 |
GaAs-IR-Lumineszenzdiode (Mini Sidelooker)
|
OSRAM GmbH
|
| Q65110A2464 Q65110A2975 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
|
OSRAM GmbH
|
